ICSE Class 10 Semiconductor Electronics: Materials, Devices and Simple Circuits — Mock Test

Free online mock test for Semiconductor Electronics: Materials, Devices and Simple Circuits (ICSE Class 10 Physics) — 73 competency-based questions with instant marking. Try the samples below, then take the full test free.

Sample questions

1. 1.When a forward bias is applied to a p-n junction, it:
   • A.raises the potential barrier
   • B.reduces the majority carrier current to zero
   • C.lowers the potential barrier
   • D.none of the above
2. 2.The small, nearly voltage-independent reverse current of a diode is called the:
   • A.diffusion current
   • B.forward current
   • C.reverse saturation current
   • D.breakdown current
3. 3.During p-n junction formation, the drift current is directed:
   • A.in the same direction as the diffusion current
   • B.opposite to the diffusion current
   • C.perpendicular to the junction plane only at equilibrium
   • D.only when an external voltage is applied
4. 4.Assertion (A): A p-n junction cannot be made simply by physically pressing a p-type slab against an n-type slab. Reason (R): Surface roughness is much larger than the inter-atomic spacing, so continuous contact at the atomic level is not possible.
   • A.Both A and R are true and R is the correct explanation of A
   • B.Both A and R are true but R is NOT the correct explanation of A
   • C.A is true but R is false
   • D.A is false but R is true
5. 5.A semiconductor has carrier concentrations ne = 8 x 10^13 m^-3 and nh = 5 x 10^12 m^-3. Since ne >> nh, this is an n-type sample. Its intrinsic carrier concentration ni (given by ni = sqrt(ne nh)) is:
   • A.2.0 x 10^13 m^-3
   • B.4.0 x 10^26 m^-3
   • C.6.5 x 10^13 m^-3
   • D.1.3 x 10^13 m^-3